Q_Card

Record for BJT parameters

 Description The Q_Card record holds the technology parameters for a bipolar junction transistor. Parameters with value $-1·{10}^{40}$ are special default values used to indicate the user has not selected a value. All capacitor parameters must be assigned positive values. MapleSim's engine does not currently handle the defective differential equation that occurs when the capacitance is zero.

Parameters

 Name Default Units Description Modelica ID ${T}_{\mathrm{nom}}$ $27$ $\mathrm{°C}$ Parameter measurement temperature TNOM ${I}_{S}$ $1·{10}^{-16}$ $A$ Transport saturation current IS ${B}_{F}$ $100$ Ideal maximum forward beta F BF ${N}_{F}$ $1$ Forward current emission coefficientF NF ${N}_{E}$ $\frac{3}{2}$ B-E leakage emission coefficient NE ${I}_{\mathrm{SE}}$ $-1·{10}^{40}$ $A$ B-E leakage saturation current, default = 0 ISE ${I}_{\mathrm{SC}}$ $-1·{10}^{40}$ $A$ B-C leakage saturation current, default = 0 ISC ${B}_{R}$ $1$ Ideal maximum reverse beta BR ${N}_{R}$ $1$ Reverse current emission coefficient NR ${N}_{C}$ $2$ B-C leakage emission coefficient NC ${V}_{\mathrm{AF}}$ $0$ $V$ Forward Early voltage VAF ${I}_{\mathrm{KF}}$ $0$ $A$ Forward beta roll-off corner current IKF ${V}_{\mathrm{AR}}$ $0$ $V$ Reverse Early voltage VAR ${I}_{\mathrm{KR}}$ $0$ $A$ Reverse beta roll-off corner current IKR ${R}_{E}$ $0$ $\mathrm{\Omega }$ Emitter resistance RE ${R}_{C}$ $0$ $\mathrm{\Omega }$ Collector resistance RC ${I}_{\mathrm{RB}}$ $0$ $A$ Current for base resistance = (rb+rbm)/2 IRB ${R}_{B}$ $0$ $\mathrm{\Omega }$ Zero bias base resistance RB ${R}_{\mathrm{BM}}$ $0$ $\mathrm{\Omega }$ Minimum base resistance, default = 0.0 RBM ${C}_{\mathrm{JE}}$ $0$ $F$ Zero bias B-E depletion capacitance CJE ${V}_{\mathrm{JE}}$ $\frac{3}{4}$ $V$ B-E built in potential VJE ${M}_{\mathrm{JE}}$ $\cdot 33$ B-E junction exponential factor MJE ${T}_{F}$ $0$ $s$ Ideal forward transit time TF ${X}_{\mathrm{TF}}$ $0$ Coefficient for bias dependence of TF XTF ${I}_{\mathrm{TF}}$ $0$ $A$ High current dependence of TF, ITF ${V}_{\mathrm{TF}}$ $0$ $V$ Voltage giving VBC dependence of TF VTF ${P}_{\mathrm{TF}}$ $0$ $\mathrm{Hz}$ Excess phase at freq=1/(TF2Pi) Hz PTF ${C}_{\mathrm{JC}}$ $0$ $F$ Zero bias B-C depletion capacitance CJC ${V}_{\mathrm{JC}}$ $\frac{3}{4}$ $V$ B-C built in potential VJC ${M}_{\mathrm{JC}}$ $\cdot 33$ B-C junction grading coefficient MJC ${X}_{\mathrm{CJC}}$ $1$ Fraction of B-C cap to internal base XCJC ${T}_{R}$ $0$ $s$ Ideal reverse transit time TR ${C}_{\mathrm{JS}}$ $0$ $F$ Zero bias C-S capacitance CJS ${V}_{\mathrm{JS}}$ $\frac{3}{4}$ $V$ Substrate junction built-in potential VJS ${M}_{\mathrm{JS}}$ $0$ Substrate junction grading coefficient MJS ${X}_{\mathrm{TB}}$ $0$ Forward and reverse beta temperature exponent XTB ${E}_{G}$ $1.11$ $\mathrm{eV}$ Energy gap for IS temperature effect on IS EG ${X}_{\mathrm{TI}}$ $3$ Temperature exponent for IS XTI ${K}_{F}$ $0$ Flicker Noise Coefficient KF ${A}_{F}$ $1$ Flicker Noise Exponent AF ${F}_{C}$ $\frac{1}{2}$ Forward bias junction fit parameter FC

 Modelica Standard Library The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.